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參數(shù)資料
| 型號： | M25P40-VMN6TP |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 26/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMN6TP |
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M25P40
26/40
POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must
not be selected (that is Chip Select (S) must follow
the voltage applied on V
CC
) until V
CC
reaches the
correct value:
–
V
CC
(min) at Power-up, and then for a further
delay of t
VSL
–
V
SS
at Power-down
Usually a simple pull-up resistor on Chip Select (S)
can be used to insure safe and proper Power-up
and Power-down.
To avoid data corruption and inadvertent write op-
erations during power up, a Power On Reset
(POR) circuit is included. The logic inside the de-
vice is held reset while V
CC
is less than the POR
threshold value, V
WI
– all operations are disabled,
and the device does not respond to any instruc-
tion.
Moreover, the device ignores all Write Enable
(WREN), Page Program (PP), Sector Erase (SE),
Bulk Erase (BE) and Write Status Register
(WRSR) instructions until a time delay of t
PUW
has
elapsed after the moment that V
CC
rises above the
V
WI
threshold. However, the correct operation of
the device is not guaranteed if, by this time, V
CC
is
still below V
CC
(min). No Write Status Register,
Program or Erase instructions should be sent until
the later of:
–
t
PUW
after V
CC
passed the V
WI
threshold
–
t
VSL
afterV
CC
passed the V
CC
(min) level
These values are specified in
Table 7.
.
If the delay, t
VSL
, has elapsed, after V
CC
has risen
above V
CC
(min), the device can be selected for
READ instructions even if the t
PUW
delay is not yet
fully elapsed.
At Power-up, the device is in the following state:
–
The device is in the Standby mode (not the
Deep Power-down mode).
–
The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail
decoupling, to stabilize the V
CC
feed. Each device
in a system should have the V
CC
rail decoupled by
a suitable capacitor close to the package pins.
(Generally, this capacitor is of the order of 0.1μF).
At Power-down, when V
CC
drops from the operat-
ing voltage, to below the POR threshold value,
V
WI
, all operations are disabled and the device
does not respond to any instruction. (The designer
needs to be aware that if a Power-down occurs
while a Write, Program or Erase cycle is in
progress, some data corruption can result.)
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| M25P40-VMP3 | 4 Mbit Uniform Sector, Serial Flash Memory |
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| M25P40-VMP3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25P40-VMN6TPB07 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
| M25P40-VMN6TPB11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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