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參數(shù)資料
| 型號： | M25P40-VMN6TP |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 22/40頁 |
| 文件大小： | 232K |
| 代理商： | M25P40-VMN6TP |
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M25P40
22/40
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write En-
able Latch (WEL).
The Bulk Erase (BE) instruction is entered by driv-
ing Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in
Figure 16.
.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Bulk Erase instruction is not exe-
cuted. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
t
BE
) is initiated. While the Bulk Erase cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Bulk Erase cycle, and is 0 when it is com-
pleted. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is
reset.
The Bulk Erase (BE) instruction is executed only if
all Block Protect (BP2, BP1, BP0) bits are 0. The
Bulk Erase (BE) instruction is ignored if one, or
more, sectors are protected.
Figure 16. Bulk Erase (BE) Instruction Sequence
C
D
AI03752D
S
2
1
3
4
5
6
7
0
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P40-VMP3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25P40-VMN6TPB07 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
| M25P40-VMN6TPB11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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