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參數(shù)資料
| 型號(hào)： | M12L16161A-5T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 12/27頁 |
| 文件大?。?/td> | 566K |
| 代理商： | M12L16161A-5T |
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M12L16161A
Elite Semiconductor Memory Technology Inc.
P.
12
Publication Date : J an. 2000
Revision : 1.3u
*Note:
1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
0
1
Active & Read/Write
Bank A
Bank B
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
BA
0
Disable auto precharge, leave bank A active at end of burst.
0
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
1
Enable auto precharge, precharge bank B at end of burst.
Operation
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
0
0
1
BA
0
1
X
precharge
Bank A
Bank B
Both Banks
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| M12L16161A-6T | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7T | 512K x 16Bit x 2Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L16161A-5TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-5TG2Q | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks |
| M12L16161A-5TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-6T | 制造商:ESI 功能描述: |
| M12L16161A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
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