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參數(shù)資料
| 型號： | M12L16161A-5.5T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 9/27頁 |
| 文件大?。?/td> | 566K |
| 代理商： | M12L16161A-5.5T |
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M12L16161A
Elite Semiconductor Memory Technology Inc.
P.
9
Publication Date : J an. 2000
Revision : 1.3u
Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0 binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing
Sequence (decimal)
0
1
0,1
1,0
0,1
1,0
(Burst of Four)
Starting Address
(column address A1-A0, binary)
Sequential Addressing
Sequence (decimal)
0,1,2,3
1,2,3,0
2,3,0,1
3,0,1,2
Interleave Addressing
Sequence (decimal)
0,1,2,3
1,0,3,2
2,3,0,1
3,2,1,0
00
01
10
11
(Burst of Eight)
Starting Address
(column address A2-A0, binary)
Sequential Addressing
Sequence (decimal)
0,1,2,3,4,5,6,7
1,2,3,4,5,6,7,0
2,3,4,5,6,7,0,1
3,4,5,6,7,0,1,2
4,5,6,7,0,1,2,3
5,6,7,0,1,2,3,4
6,7,0,1,2,3,4,5
7,0,1,2,3,4,5,6
Interleave Addressing
Sequence (decimal)
0,1,2,3,4,5,6,7
1,0,3,2,5,4,7,6
2,3,0,1,6,7,4,5
3,2,1,0,7,6,5,4
4,5,6,7,0,1,2,3
5,4,7,6,1,0,3,2
6,7,4,5,2,3,0,1
7,6,5,4,3,2,1,0
000
001
010
011
100
101
110
111
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for 1Mx16 divice.
POWER UP SEQUENCE
1.Apply power and start clock, attempt to maintain CKE= “H”, L(U)DQM = “H” and the other pin are NOP condition at the
inputs.
2.Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3.Issue precharge commands for all banks of the devices.
4.Issue 2 or more auto-refresh commands.
5.Issue mode register set command to initialize the mode register.
Cf.)Sequence of 4 & 5 is regardless of the order.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M12L16161A-5T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-5TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-5TG2Q | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks |
| M12L16161A-5TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-6T | 制造商:ESI 功能描述: |
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