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| 型號： | LWE2010S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 74K |
| 代理商： | LWE2010S |
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Up to 0.1 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 250
open base
open collector
65
40
20
15
3
250
4.8
+200
200
235
V
V
V
V
mA
W
°
C
°
C
°
C
T
mb
= 75
°
C
t
≤
10 s; note 1
Fig.2 DC SOAR.
T
mb
≤
75
°
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
≤
250
.
handbook, halfpage
10
2
MGA250
10
VCE (V)
1
IC
(A)
(1)
(2)
10
1
10
2
Fig.3
Maximum power dissipation derating as a
function of mounting base temperature.
P
tot max
= 4.8 W.
handbook, halfpage
4
2
0
50
MGA249
50
Ptot
(W)
150
Tmb (
o
C)
250
0
100
200
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