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參數(shù)資料
| 型號： | LWE2010S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 74K |
| 代理商： | LWE2010S |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common emitter class A power
amplifiers at frequencies up to
2.3 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT446A metal ceramic flange
package, with emitter connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class A
selective amplifier.
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
≥
0.8
G
po
(dB)
≥
8
Z
I
/Z
L
(
)
class A (CW)
2.3
18
110
see Figs 6
and 7
PINNING - SOT446A
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM313
e
c
b
1
2
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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