參數(shù)資料
型號(hào): LTC3880IUJ-1#PBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: 0.1 A DUAL SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PQCC40
封裝: 6 X 6 MM, LEAD FREE, PLASTIC, WJJD-2, QFN-40
文件頁(yè)數(shù): 21/112頁(yè)
文件大?。?/td> 2182K
代理商: LTC3880IUJ-1#PBF
LTC3880/LTC3880-1
16
3880fa
OPERATION
from 0V to 1.024V. The output voltage, through feedback
of the EA, will be regulated to 5.5 times the DAC output
(2.75 times if range = 1). The DAC value is calculated by
the part to synthesize the users desired output voltage.
The output voltage is programmed by the user either
with the resistor configuration pins detailed in Tables 12
and 13 or by the VOUT command (either from NVM or
by PMBus command). Refer to the PMBus command
section of the data sheet or the PMBus specification for
more details. The output voltage can be modified by the
user at any time with a PMBus VOUT_COMMAND. This
command will typically have a latency less than 10ms.
The user is encouraged to reference the PMBus Power
SystemManagementProtocolSpecificationtounderstand
how to program the LTC3880. This specification can be
found at http://www.pmbus.org/specs.html.
Continuing the basic operation description, the current
mode controller will turn off the top gate when the peak
current is reached. If the load current increases, VSENSE
will slightly droop with respect to the DAC reference.
This causes the ITH voltage to increase until the average
inductor current matches the new load current. After the
top MOSFET has turned off, the bottom MOSFET is turned
on. In continuous conduction mode, the bottom MOSFET
stays on until the end of the switching cycle.
EEPROM
The LTC3880 contains internal EEPROM (nonvolatile
memory) to store configuration settings and fault log
information. EEPROM endurance retention and mass
write operation time are specified in the Electrical Char-
acteristics and Absolute Maximum Ratings sections.
Write operations above TJ = 85°C are possible although
the Electrical Characteristics are not guaranteed and the
EEPROM will be degraded. Read operations performed at
temperatures between 85°C and 125°C will not degrade
the EEPROM. Writing to the EEPROM above 85°C will
result in a degradation of retention characteristics. The
faultloggingfunction,whichisusefulindebuggingsystem
problemsthatmayoccurathightemperatures,onlywrites
tofaultlogEEPROMlocations.Ifoccasionalwritestothese
registers occur above 85°C, the slight degradation in the
data retention characteristics of the fault log will not take
away from the usefulness of the function.
It is recommended that the EEPROM not be written
when the die temperature is greater than 85°C. If the die
temperature exceeds 130°C, the LTC3880 will disable all
EEPROM write operations. All EEPROM write operations
will be re-enabled when the die temperature drops below
120°C. (The controller will also disable when the die
temperature exceeds the internal overtemperature fault
limit 160°C with a 10°C hysteresis)
The degradation in EEPROM retention for temperatures
>125°C can be approximated by calculating the dimen-
sionless acceleration factor using the following equation:
AF
= e
Ea
k
1
TUSE+273
1
TSTRESS+273
where:
AF = acceleration factor
Ea = activation energy = 1.4eV
K = 8.617 10–5 eV/°K
TUSE = 125°C specified junction temperature
TSTRESS = actual junction temperature in °C
Example: Calculate the effect on retention when operating
at a junction temperature of 135°C for 10 hours.
TSTRESS = 130°C
TUSE = 125°C
AF= e[(1.4/8.617 10–5) (1/398 – 1/403)] = 1.66
The equivalent operating time at 125°C = 16.6 hours.
Thus the overall retention of the EEPROM was degraded
by 16.6 hours as a result of operating at a junction tem-
peratureof130°Cfor10hours.Theeffectoftheoverstress
is negligible when compared to the overall EEPROM
retention rating of 87,600 hours at a maximum junction
temperature of 125°C.
POWER UP AND INITIALIZATION
The LTC3880 is designed to provide standalone supply
sequencing and controlled turn-on and turn-off opera-
tion. It operates from a single input supply (4.5V to 24V)
while three on-chip linear regulators generate internal
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