參數(shù)資料
型號: LTC3878IGN#PBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, PDSO16
封裝: 0.150 INCH, LEAD FREE, PLASTIC, SSOP-16
文件頁數(shù): 3/26頁
文件大?。?/td> 399K
代理商: LTC3878IGN#PBF
LTC3878
3878fa
TheresultingpowerdissipationintheMOSFETsatmaxi-
mumoutputcurrentare:
P
D
I
R
V
TOP
TOP OUT MAX
TOP
DS ON MAX
=
+
(
)
(
)
( )(
)
2 ρτ
IIN
OUT MAX
MILLER
TGHIGH
INTVC
I
C
DR
V
2
(
)
(
)
CC
MILLER
TGLOW
MILLER
OSC
BOT
BO
V
DR
V
f
P
D
+
=
TT OUT MAX
BOT
DS ON MAX
I
R
(
)
(
)
( )(
)
2 ρτ
DRTGHIGHispull-updriverresistanceandDRTGLOWisthe
TGdriverpull-downresistance.VMILLERistheMilleref-
fectVGSvoltageandistakengraphicallyfromthepower
MOSFETdatasheet.
MOSFETinputcapacitanceisacombinationofseveral
componentsbutcanbetakenfromthetypical“gatecharge”
curveincludedonthemostdatasheets(Figure2).The
curveisgeneratedbyforcingaconstantinputcurrent
intothegateofacommonsource,currentsource,loaded
stageandthenplottingthegateversustime.Theinitial
slopeistheeffectofthegate-to-sourceandgate-to-drain
capacitance.Theflatportionofthecurveistheresultofthe
Millermultiplicationeffectofthedrain-to-gatecapacitance
asthedraindropsthevoltageacrossthecurrentsource
load.Theupperslopinglineisduetothedrain-to-gate
accumulationcapacitanceandthegate-to-sourcecapaci-
tance.TheMillercharge(theincreaseincoulombsonthe
horizontalaxisfromatobwhilethecurveisflat)isspeci-
fiedfromagivenVDSdrainvoltage,butcanbeadjusted
fordifferentVDSvoltagesbymultiplyingbytheratioof
theapplicationVDStothecurvespecifiedVDSvalues.A
waytoestimatetheCMILLERtermistotakethechangein
gatechargefrompointsaandbortheparameterQGDon
amanufacturersdatasheetanddividebythespecified
VDStestvoltage,VDS(TEST).
C
Q
V
MILLER
GD
DS TEST
=
(
)
CMILLERisthemostimportantselectioncriteriafordeter-
miningthetransitionlossterminthetopMOSFETbutis
notdirectlyspecifiedonMOSFETdatasheets.
BothMOSFETshaveI2Rpowerloss,andthetopMOSFET
includesanadditionaltermfortransitionloss,whichare
highestathighinputvoltages.ForVIN<20V,thehighcur-
rentefficiencygenerallyimproveswithlargerMOSFETs,
whileforVIN>20V,thetransitionlossesrapidlyincrease
tothepointthattheuseofahigherRDS(ON)devicewith
lower CMILLER actually provides higher efficiency. The
synchronousMOSFETlossesaregreatestathighinput
voltagewhenthetopswitchdutyfactorisloworduring
ashort-circuitwhenthesynchronousswitchisonclose
to100%oftheperiod.
OperatingFrequency
Thechoiceofoperatingfrequencyisatradeoffbetween
efficiencyandcomponentsize.Loweringtheoperatingfre-
quencyimprovesefficiencybyreducingMOSFETswitching
lossesbutrequireslargerinductanceand/orcapacitance
tomaintainlowoutputripplevoltage.Conversely,raising
theoperatingfrequencydegradesefficiencybutreduces
componentsize.
TheoperatingfrequencyofLTC3878applicationsisde-
terminedimplicitlybytheone-shottimerthatcontrolsthe
on-time,tON,ofthetopMOSFETswitch.Theon-timeis
setbythecurrentintotheIONpinaccordingto:
t
V
I
pF
ON
ION
=
( )
0 7
10
.
TyingaresistorRONfromVINtotheIONpinyieldsan
on-timeinverselyproportionaltoVIN.Forastep-down
converter,thisresultsinpseudofixedfrequencyoperation
astheinputsupplyvaries.
f
V
V R
pF
Hz
OP
OUT
ON
=
( )
0 7
10
.
[ ]
applicaTions inForMaTion
Figure2.GateChargeCharacteristic
+
VDS
VIN
3878 F02
VGS
MILLER EFFECT
QIN
a
b
CMILLER = (QB – QA)/VDS
VGS
V
+
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