參數(shù)資料
型號: LT1715CMS
廠商: LINEAR TECHNOLOGY CORP
元件分類: 運動控制電子
英文描述: 4ns, 150MHz Dual Comparator with Independent Input/Output Supplies
中文描述: DUAL COMPARATOR, 3500 uV OFFSET-MAX, PDSO10
封裝: PLASTIC, MSOP-10
文件頁數(shù): 5/16頁
文件大?。?/td> 239K
代理商: LT1715CMS
5
LT1715
Maximum Toggle Rate
vs Supply Voltage
Maximum Toggle Rate
vs Input Amplitude
Maximum Toggle Rate
vs Temperature
OUTPUT LOAD CAPACITANCE (pF)
0
P
30
50
1715 G17
10
20
40
8
7
6
5
4
3
T
A
= 25
°
C
V
= 100mV
OVERDRIVE = 20mV
+V
S
= V
CC
= 5V
V
EE
= –5V
RISING EDGE
(t
PDLH
)
FALLING EDGE
(t
PDHL
)
Maximum Toggle Rate
vs Load Capacitance
Propagation Delay
vs Load Capacitance
TYPICAL PERFOR U
Propagation Delay
vs Supply Voltage
Propagation Delay
vs Temperature
Propagation Delay
vs Overdrive
OVERDRIVE (mV)
0
P
30
50
1715 G10
10
20
40
t
PDLH
t
PDHL
t
PDHL
8
7
6
5
4
3
T
A
= 25
°
C
V
STEP
= 100mV
C
LOAD
= 10pF
V
CC
= +V
S
= 3V
V
EE
= 0V
V
CC
= +V
= 5V
V
EE
= –5V
t
PDLH
TEMPERATURE (
°
C)
–50
P
7.5
25
1715
G11
6.0
5.0
–25
0
50
4.5
4.0
3.5
3.0
8.0
7.0
6.5
5.5
75
100
125
t
PDLH
V
STEP
= 100mV
C
LOAD
= 10pF
OVERDRIVE = 5mV
V
CC
= +V
= 3V
V
EE
= 0V
OVERDRIVE = 20mV
V
CC
= +V
S
= 5V
V
EE
= –5V
2.5
4.0
3.5
P
5.5
5.0
t
PDLH
t
PDLH
t
PDHL
t
PDHL
4.5
4.0
5.0
1715 G12
3.0
SUPPLY VOLTAGE, +V
S
= V
CC
OR V
+
(V)
3.5
4.5
5.5
6.0
T
A
= 25
°
C
V
STEP
= 100mV
OVERDRIVE = 20mV
C
LOAD
= 10pF
V
EE
= GND
V
EE
= –5V
Response to 150MHz 25mV
P-P
Sine Wave Driving 10pF
INPUT SINUSOID AMPLITUDE (mV)
1
0
T
100
80
60
40
20
120
140
160
10
100
1715 G13
180
T
A
= 25
°
C
+V
S
= V
CC
= 5V
V
EE
= GND
C
LOAD
= 10pF
TEMPERATURE (
°
C)
–50
50
T
70
110
130
150
250
190
0
50
75
1715 G14
90
210
230
170
–25
25
100
125
T
A
= 25
°
C
V
IN
=
±
50mV SINUSOID
+V
S
= V
CC
= 5V
V
EE
= –5V
C
LOAD
= 10pF
R
LOAD
= 500
+V
S
= V
CC
SUPPLY VOLTAGE (V)
2
T
150
175
200
6
1715 G15
125
100
50
3
4
5
75
250
225
TOGGLING FROM
1V TO +V
S
– 1V
T
A
= 25
°
C
V
IN
=
±
50mV SINUSOID
V
EE
= GND
C
LOAD
= 10pF
TOGGLING FROM
20% TO 80% OF +V
S
OUTPUT CAPACITANCE (pF)
0
T
250
225
200
175
150
125
100
75
50
40
1715 G16
10
20
30
50
35
5
15
25
45
T
A
= 25
°
C
V
IN
=
±
50mV SINUSOID
+V
S
= V
= 5V
V
EE
= GND
NA
25mV
P-P
5V
OUT A
0V
20mV/DIV
1V/DIV
FET PROBES
V
CC
= 5V
V
EE
= –5V
+V
S
= 5V
V
CM
= 0V
2.5ns/DIV
1715 G18
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