
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Supply voltage
Input voltage
Operating temperature
Storage temperature
V
CC
V
IN
Topr
Tstg
-0.3 to +7.0
-0.3 to V
CC
+0.3
0 to +50
-55 to +150
V
V
°
C
°
C
1
1
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +50
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
V
IH
V
IL
2.7
2.2
-0.3
3.0
3.3
V
V
V
Input voltage
V
CC
+ 0.3
0.8
DC CHARACTERISTICS (V
CC
= 3 V
±
10%, T
A
= 0 to +50
°
C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
NOTE
Output ‘LOW’ voltage
Output ‘HIGH’ voltage
Input leakage current
Output leakage current
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
OL
= 2.1 mA
I
OH
= -1.0
mA
V
IN
= 0 V to V
CC
CE = V
IH
, V
I/O
= 0 V to V
CC
Outputs open (OE = V
CC
)
Outputs open (OE = V
IH
)
CE
≥
V
CC
- 0.2 V
All other input pins = 0 V to V
CC
0.5
V
V
V
CC
- 0.5
-1.0
-1.0
1.0
1.0
10
10
μ
A
μ
A
mA
mA
Operating current
8
8
1
2
Standby current
I
CCL
1.0
μ
A
NOTES:
1.
CE = 0 V; all other input pins = 0 V to V
CC
2.
CE = V
IL
; all other input pins = V
IL
to V
IH
AC CHARACTERISTICS (V
CC
= 3 V
±
10%, T
A
= 0 to +50
°
C)
(1) READ CYCLE
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Read cycle time
Address access time
Chip enable access time
Chip enable Low to output in Low-Z
Output enable access time
Output enable Low to output in Low-Z
Chip disable to output in High-Z
Output enable to output in High-Z
Output hold time
t
RC
t
AA
t
ACE
t
CLZ
t
OE
t
OLZ
t
CHZ
t
OHZ
t
OH
1000
ns
ns
ns
ns
ns
ns
ns
ns
ns
1000
1000
10
1
100
10
0
0
10
1
1
1
40
40
NOTE:
1.
Active output to high-impedance and high-impedance to output
active tests specified for a
±
200 mV transition
from steady state levels into the test load.
CMOS 16K (2K
×
8) Static RAM
LH5116S
3