參數(shù)資料
型號(hào)： LC6529F
廠商： Sanyo Electric Co.,Ltd.
英文描述： 4-Bit Microcomputer for Small-Scale Control Applications
中文描述： 4小位微機(jī)控制應(yīng)用規(guī)模
文件頁數(shù)： 21/39頁
文件大?。?/td> 525K
代理商： LC6529F
Electrical Characteristics
at Ta = –40 to +85°C, V
SS
= 0 V, V
DD
= 2.2 to 6.0 V
Note:
*
The RC oscillator and external clock options require a Schmidt trigger configuration for OSC1.
No. 5117-21/39
LC6529N, LC6529F, LC6529L
Parameter
Symbol
Conditions
min
typ
max
Unit
Open-drain (OD) configuration for port: With output
N-channel transistor off. (Includes transistor’s leak
current.) V
IN
= 13.5 V
PE: Using port E configuration, V
IN
= V
DD
OSC1: Using external clock option, V
IN
= V
DD
Open-drain (OD) configuration for port: With output
N-channel transistor off. (Includes transistor’s leak
current.) V
IN
= V
SS
Pull-up (PU) resistor configuration for port:
With output N-channel transistor off. (Includes
transistor’s leak current.) V
IN
= V
SS
Pull-up (PU) resistor configuration for port C:
With output N-channel transistor off. (Includes
transistor’s leak current.) V
IN
= V
SS
PE: Using port E configuration, V
IN
= V
SS
RES: V
IN
= V
SS
OSC1: Using external clock option, V
IN
= V
SS
Pull-up (PU) resistor configuration for port C:
I
OH
= –50 μA
PA, PC, PD: I
OL
= 3 mA
PA, PC, PD: With I
OL
for each port less than
or equal to 1 mA, I
OL
= 1 mA
RES
I
IH
1
5.0
Input high level current
μA
I
IH
2
I
IH
3
1.0
1.0
I
IL
1
–1.0
μA
I
IL
2
–220
–71.5
Input low level current
I
IL
3
–6.00
–2.17
mA
I
IL
4
I
IL
5
I
IL
6
–1.0
–45
–10
μA
–1.0
Output high level voltage
V
OH
V
DD
– 0.5
V
V
OL
1
1.5
Output low level voltage
V
OL
2
0.4
V
Hysteresis voltage
V
HIS
1
V
HIS
2
0.1 V
DD
0.1 V
DD
V
OSC1
*
: Using RC oscillator or external clock option
Parameter
Symbol
Conditions
min
typ
max
Unit
[Current drain]
RC oscillator
I
DD OP
1
I
DD OP
2
V
DD
: Figure 2, 400 kHz (typ)
V
DD
: Figure 3, 4 MHz, 1/4 frequency divider
V
DD
: Figure 3, 4 MHz, 1/4 frequency divider,
V
DD
= 2.2 V
V
DD
: Figure 3, 2 MHz, 1/3 frequency divider
V
DD
: Figure 3, 2 MHz, 1/4 frequency divider
V
DD
: Figure 3, 2 MHz, 1/3, 1/4 frequency divider
V
DD
= 2.2 V
V
DD
: Figure 3, 800 kHz
V
DD
: Figure 3, 400 kHz
V
DD
: 200 to 667 kHz, 1/1 frequency divider,
600 to 2000 kHz, 1/3 frequency divider,
800 to 2667 kHz, 1/4 frequency divider
0.4
1.0
1.6
4.0
I
DD OP
3
0.4
0.8
I
DD OP
4
I
DD OP
5
1.3
3.0
mA
Ceramic oscillator
1.3
3.0
I
DD OP
6
0.3
0.6
I
DD OP
7
I
DD OP
8
1.1
2.6
0.9
2.4
External clock
I
DD OP
9
1.0
2.5
mA
I
DD
st1
V
DD
: With output N-channel transistor off and
port level = V
DD
, V
DD
= 6 V
V
DD
: With output N-channel transistor off and
port level = V
DD
, V
DD
= 2.2 V
0.05
10
Standby operation
μA
I
DD
st2
0.025
5
[Oscillator characteristics]
RC oscillator Oscillator frequency
f
MOSC
OSC1, OSC2: Figure 2, Cext = 220 pF ± 5%,
Rext = 12.0 k
± 1%
275
400
577
kHz
[Oscillator characteristics] (Ceramic oscillator)
OSC1, OSC2: Figure 3, f
O
= 400 kHz
OSC1, OSC2: Figure 3, f
O
= 800 kHz
OSC1, OSC2: Figure 3, f
O
= 2 MHz
OSC1, OSC2: Figure 3, f
O
= 4 MHz,
1/4 frequency divider
384
400
416
768
800
832
Oscillator frequency
f
CFOSC
*
1920
2000
2080
kHz
3840
4000
4160
Figure 4, f
O
= 400 kHz
Figure 4, f
O
= 800 kHz,
f
O
= 2 MHz, 1/3, 1/4 frequency divider,
f
O
= 4 MHz, 1/4 frequency divider
10
Oscillator stabilization interval
t
CFS
10
ms
Continued on next page.
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