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參數(shù)資料
| 型號(hào)： | L7597 |
| 廠商： | Lineage Power |
| 英文描述： | Resistive Subscriber Line Interface Circuit (SLIC), Ring Relay, and Protector (SRP) for Short Loop and TA-909 Applications(用于短環(huán)路和TA-909的電阻性用戶線接口、振鈴繼電器和保護(hù)器) |
| 中文描述： | 電阻用戶線接口電路（SLIC），環(huán)繼電器和保護(hù)（SRP）的短環(huán)路和TA - 909應(yīng)用（用于短環(huán)路和電訊- 909的電阻性用戶線接口，振鈴繼電器和保護(hù)器） |
| 文件頁數(shù)： | 15/34頁 |
| 文件大小： | 564K |
| 代理商： | L7597 |
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Lucent Technologies Inc.
15
Advance Data Sheet
March 1997
Relay, and Protector (SRP) for Short Loop and TA-909 Applications
L7597 Resistive Subscriber Line Interface Circuit (SLIC), Ring
Electrical Characteristics
(continued)
Switch Characteristics
Table 12. Battery Switch (SW1) and Ring Break Switch (SW2)
1. SW2 must be off if the voltage on pin PR is more positive than V
CCA
.
2. At 25
°
C. Maximum voltage rating has a temperature coefficient of +0.167 V/
°
C.
3. This parameter is not tested in production. It is guaranteed by design and device characterization.
4. Applied voltage is 100 Vpp square wave at 100 Hz to measure dV/dt sensitivity.
Table 13. Ringing Access Switch (SW3)
1. SW2 must be off if the voltage on pin PR is more positive than V
CCA
.
2. At 25
°
C. Maximum voltage rating has a temperature coefficient of +0.167 V/
°
C.
3. This parameter is not tested in production. It is guaranteed by design and device characterization.
4. Applied voltage is 100 Vpp square wave at 100 Hz to measure dV/dt sensitivity.
Parameter
Min
Typ
Max
±
320
2
±
50
50
100
320
2
60
—
Unit
V
μ
A
pF
V
mA
V/
μ
s
Off-state
1
:
Maximum Differential Voltage
dc Leakage Current (V
SW
=
±
320 V)
Feedthrough Capacitance
3
On-state (See Figures 3 and 4.):
Resistance (R
ON
)
Maximum Differential Voltage (Vmax)
Current Limit (I
LIMIT
)
dV/dt Sensitivity
3,
4
—
—
—
—
—
—
—
—
20
—
50
—
35
200
Parameter
Min
Typ
Max
Unit
V
μ
A
μ
A
pF
V
A
mA
V/
μ
s
Off-state:
Maximum Differential Voltage
dc Leakage Current (V
SW
=
±
500 V)
dc Leakage Current (V
SW
=
±
250 V)
Feedthrough Capacitance
1
On-state (See Figures 3 and 4.):
Crossover Offset Voltage (V
OS
; I
SW
=
±
1 mA)
Resistance (R
ON
)
Surge Current (10
μ
s x 1000
μ
s pulse)
3
Release Current
1
dV/dt Sensitivity
3,
4
—
—
—
—
—
—
—
—
±
500
2
±
20
±
1
10
3
10
2.0
3
—
—
—
—
0.1
—
—
—
—
—
500
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