參數(shù)資料
型號: L6728D
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: 30 A SWITCHING CONTROLLER, 300 kHz SWITCHING FREQ-MAX, PDSO10
封裝: 3 X 3 MM, ROHS COMPLIANT, DFN-10
文件頁數(shù): 11/33頁
文件大小: 1215K
代理商: L6728D
L6728D
Application details
Doc ID 16498 Rev 1
19/33
Figure 7.
Power connections (heavy lines)
Gate traces and phase traces must be sized according to the driver RMS current delivered
to the power MOSFET. The device robustness allows the management of applications with
the power section far from the controller without compromising performance. In any case,
when possible it is recommended to minimize the distance between the controller and
power section.
Small signal components and connections to critical nodes of the application, as well as
bypass capacitors for the device supply, are also important. Locate bypass capacitor (VCC
and bootstrap capacitor) and feedback compensation components as close to the device as
practical. For overcurrent programmability, place ROCSET close to the device and avoid
leakage current paths on the LGATE / OC pin, since internal current source is only 10 A.
Systems that do not use a Schottky diode in parallel to the low-side MOSFET might show
big negative spikes on the phase pin. This spike must be limited within the absolute
maximum ratings (for example, adding a gate resistor in series to the HS MOSFET gate), as
well as the positive spike, but has an additional consequence: it causes the bootstrap
capacitor to be over-charged. This extra charge can cause, in the worst-case condition of
maximum input voltage and during particular transients, that boot-to-phase voltage
overcomes the absolute maximum ratings, also causing device failures. It is then suggested
in this cases to limit this extra charge by adding a small resistor in series to the bootstrap
diode.
Figure 8.
Driver turn-on and turn-off paths
L
CIN
VIN
UGATE
PHASE
LGATE
GND
LOAD
L6728A
COUT
L6728D
RGATE
RINT
CGD
CGS
CDS
VCC
LS DRIVER
LS MOSFET
GND
LGATE
RGATE
RINT
CGD
CGS
CDS
BOOT
HS DRIVER
HS MOSFET
PHASE
UGATE
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