參數(shù)資料
型號(hào): KP027J
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 250mW GaAs Power FET (Pb-Free Type)
中文描述: 25萬千瓦GaAs功率場效應(yīng)管(無鉛型)
文件頁數(shù): 5/13頁
文件大?。?/td> 560K
代理商: KP027J
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120007P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc= 25
°C, Vds=8V, Ids=100mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
Source : 0.65
154.2
Pout max : 13.7dBm
: 0.61
92.7
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP3
Source : 0.68
133.9
IP3 max : 40.4dBm
: 0.37
91.1
Tc=25°C, Vds=8V, Ids=80mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
Source : 0.65
154.2
Pout max : 13.7dBm
: 0.63
94.2
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP3
Source : 0.68
133.9
IP3 max : 40.55dBm
: 0.54
77.8
25
50
100
-j100
-j50
-j25
+j25
+j50
+j100
13.7
12.45
25
50
100
-j100
-j50
-j25
+j25
+j50
+j100
40.55
38.05
25
50
100
-j100
-j50
-j25
+j25
+j50
+j100
13.7
12.45
25
50
100
-j100
-j50
-j25
+j25
+j50
+j100
40.4
39.15
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