參數(shù)資料
型號： KP027J
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： 250mW GaAs Power FET (Pb-Free Type)
中文描述： 25萬千瓦GaAs功率場效應(yīng)管（無鉛型）
文件頁數(shù)： 3/13頁
文件大?。?/td> 560K
代理商： KP027J
Tc=25°C, Vds=8V
Ids=80mA,
Common Source, Zo=50
(Calibrated to device leads)
Technical Note
P0120007P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
0
9
-180
-
2.0
4.0
6.0
0.02
0.04
0.06
Scale for |S12|
1.2GHz
1.2GHz
2.4GHz
2.4GHz
S21
S12
45
13
-15
-4
S
0
1
1
10.0
-
5
5.0
2
3
4
0
0
0
0
0
0
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
-
1
-
-
20
-
30
-
4.0
-02
0
-04
0
-.
-
Ids
Ids
=100mA
Freq(GHz)
S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.847
-97.5
6.148
107.5
0.038
36.0
0.555
-41.6
1.4
0.823
-112.3
5.764
97.0
0.041
28.8
0.534
-47.6
1.6
0.800
-126.2
5.392
87.0
0.043
21.9
0.513
-53.8
1.8
0.787
-139.5
5.038
77.6
0.045
15.6
0.495
-59.4
2.0
0.776
-151.5
4.702
68.6
0.046
9.7
0.474
-65.1
2.2
0.769
-162.7
4.407
60.2
0.046
4.1
0.458
-70.5
2.4
0.761
-173.4
4.133
52.3
0.047
-1.6
0.433
-76.0
=80mA
Freq(GHz)
S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.846
-97.3
6.188
107.5
0.040
35.7
0.547
-42.5
1.4
0.821
-112.1
5.802
97.0
0.043
28.5
0.525
-48.6
1.6
0.798
-126.1
5.428
87.1
0.045
21.4
0.503
-54.9
1.8
0.785
-139.3
5.071
77.6
0.047
15.1
0.484
-60.6
2.0
0.774
-151.4
4.734
68.7
0.048
9.1
0.463
-66.4
2.2
0.766
-162.5
4.437
60.3
0.049
3.5
0.446
-71.8
2.4
0.759
-173.3
4.159
52.3
0.050
-2.3
0.421
-77.3
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
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