參數(shù)資料
型號(hào): KP024J
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 1.5W GaAs Power FET (Pb-Free Type)
中文描述: 1.5W GaAs功率場(chǎng)效應(yīng)管(無鉛型)
文件頁數(shù): 8/13頁
文件大小: 599K
代理商: KP024J
[Typical Performance]
KP024J Application Circuit
Vds=6V Ids=400mA, Tc=25°C
Frequency characteristics were measured with Pout at 17dBm.
50
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-8-
Technical Note
P0120004P
1.5W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
11
10
15
20
25
30
35
40
45
340
350
360
370
380
390
400
410
420
-1
1
3
5
7
9
Pout, Gain, IP3, Ids vs Pin
P
G
I
I
Pin (dBm)
IP3
Ids
Pout
Gain
-70
-65
-60
-55
-50
-45
-40
I
I
10
12
14
16
18
20
22
Pout (dBm)
IM3, Im5 vs Pout
IM3
IM5
43.0
43.5
44.0
44.5
45.0
2100
2120
2140
2160
2180
IP3 vs Frequency
Frequency (MHz)
Vds=6V
Vds=5V
Vds=4V
I
2100
2120
2140
2160
2180
Frequency (MHz)
42.0
42.5
43.0
43.5
44.0
44.5
45.0
IP3 vs Frequency
Ids=400mA
Ids=360mA
Ids=320mA
I
10.8
10.9
11.0
11.1
11.2
11.3
2100
2120
2140
2160
2180
Gain vs Frequency
Frequency (MHz)
Vds=6V
Vds=5V
Vds=4V
G
11.0
11.1
11.2
11.3
11.4
11.5
2100
2120
2140
2160
2180
G
Frequency (MHz)
Gain vs Frequency
Ids=400mA
Ids=320mA
Ids=360mA
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