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參數(shù)資料
| 型號： | KMM5328004CSW |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| 中文描述： | 8米× 32的DRAM上海藥物研究所使用4Mx16，4K的刷新，5V的 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 406K |
| 代理商： | KMM5328004CSW |
DRAM MODULE
KMM5328004BSW/BSWG
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
0.125MIN
(3.20MIN)
0.150MAX
(3.81MAX)
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
NOTE : The used device is 4Mx16 DRAM, TSOPII
DRAM Part No. : KMM5328004BSW/BSWG -- KM416C4104BS (400 mil)
1.000(31.75)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
Gold/Solder Plating Lead
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM5361203C2W | 1M x 36 DRAM SIMM(1M x 36 動態(tài) RAM模塊) |
| KMM53616000BK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM5328004CSWG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328100CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| KMM5328100CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| KMM5361203C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| KMM5361203C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
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