- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374364 > KMM374S3323T (SAMSUNG SEMICONDUCTOR CO. LTD.) 32Mx72 SDRAM DIMM(32M x 72 動(dòng)態(tài) RAM模塊) PDF資料下載
參數(shù)資料
| 型號(hào)： | KMM374S3323T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx72 SDRAM DIMM(32M x 72 動(dòng)態(tài) RAM模塊) |
| 中文描述： | 32Mx72 SDRAM的內(nèi)存（32M × 72配置動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | KMM374S3323T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
PC100 SDRAM MODULE
KMM374S3323T
REV. 0 Aug. 1998
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
′
t care, H=Logic high, L=Logic low)
1. OP Code : Operand code
A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If both BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank B is selected.
If both BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
If A
10
/AP is "High" at row precharge, BA
0
and BA
1
is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
BA
0,1
A
10
/AP
A
11,
A
9
~ A
0
Note
Register
Mode register set
H
X
L
L
L
L
X
OP code
1,2
Refresh
Auto refresh
H
H
L
L
L
H
X
X
3
Self
refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank active & row addr.
H
X
L
L
H
H
X
V
Row address
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
L
Column
address
(A
0
~ A
9
)
4
Auto precharge enable
H
4,5
Write &
column address
Auto precharge disable
H
X
L
H
L
L
X
V
L
Column
address
(A
0
~ A
9
)
4
Auto precharge enable
H
4,5
Burst stop
H
X
L
H
H
L
X
X
6
Precharge
Bank selection
H
X
L
L
H
L
X
V
L
X
All banks
X
H
Clock suspend or
active power down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge power down mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
V
X
7
No operation command
H
X
H
X
X
X
X
X
L
H
H
H
Notes :
X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM374S403CTL | 4Mx72 SDRAM DIMM(4Mx72 動(dòng)態(tài) RAM模塊) |
| KMM374S403CT | 4Mx72 SDRAM DIMM(4Mx72 動(dòng)態(tài) RAM模塊) |
| KMM374S803BTL | 8Mx72 SDRAM DIMM(8Mx72 動(dòng)態(tài) RAM模塊) |
| KMM374S823BTL | 8Mx72 SDRAM DIMM(8Mx72 動(dòng)態(tài) RAM模塊) |
| KMM374S823BT | 8Mx72 SDRAM DIMM(8Mx72 動(dòng)態(tài) RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM374S403CT | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:PC100 SDRAM MODULE |
| KMM38 | 制造商:TYSEMI 制造商全稱(chēng):TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES |
| KMM39 | 制造商:TYSEMI 制造商全稱(chēng):TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES |
| KMM391M400MCND | 制造商:United Chemi-Con 功能描述:SN400X139 UCC S6L9A |
| KMM4 | 制造商:TYSEMI 制造商全稱(chēng):TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。