參數(shù)資料
型號： KMM332V224BT-L
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2M x 32 DRAM SODIMM(動態(tài) RAM模塊)
中文描述： 200萬× 32內(nèi)存的SODIMM（動態(tài)內(nèi)存模塊）
文件頁數(shù)： 3/15頁
文件大?。?/td> 232K
代理商： KMM332V224BT-L
DRAM MODULE
KMM332V204BT-L
KMM332V224BT-L
I
CC
1, I
CC
3, I
CC
4 and I
CC
6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC
1 and I
CC
3, address can be changed maximum once while RAS=V
IL
. In I
CC
4,
address can be changed maximum once within one page mode cycle,
t
PC
.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
4
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : V
CC
+1.3V/15ns, Pulse width is measured at V
CC
.
*2 : -1.3V/15ns, Pulse width is measured at V
SS
.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.1
-0.3*
2
Typ
3.3
0
-
-
Max
3.6
0
Unit
V
V
V
V
V
CC
+0.3*
1
0.8
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
KMM332V204BT
Min
I
CC1
-L5
-L6
-
I
CC2
Don
′
t care
-
I
CC3
-L5
-L6
-
I
CC4
-L5
-L6
-
I
CC5
Don
′
t care
-
I
CC6
-L5
-L6
-
I
CC7
Don
′
t care
-
I
CCS
Don
′
t care
-
I
I(L)
I
O(L)
-10
V
OH
V
OL
-
I
CC1
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
: Fast Page Mode Current * (RAS=V
IL
, CAS cycling :
t
PC
=min)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V
,
CAS=0.2V)
DQ0-31=Don
′
t care, tRC=31.25uS(4K Ref.) , 125uS(1K Ref.), tRAS=tRASmin~300ns
Iccs : Self Refresh Current (RAS=CAS-V
IL
, W=OE=A0-A11=V
CC
-0.2V or 0.2V, DQ0-DQ31=V
CC
-0.2V,0.2V or OPEN)
I
I(L)
: Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V, all other pins not under test=0 V.)
I
O(L)
: Output Leakage Current(Data Out is disabled 0V
≤
V
OUT
≤
V
CC
)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
Symbol
Speed
KMM332V224BT
Min
Unit
Max
222
202
4
222
202
202
182
800
222
202
1600
800
20
10
-
0.4
Max
322
302
4
322
302
202
182
800
322
302
1600
800
20
10
-
0.4
-
-
-
-
-
-
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
uA
uA
V
V
-
-
-
-
-
-
-
-
-
-
Don
′
t care
-20
-20
-10
2.4
-
Don
′
t care
2.4
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