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參數資料
| 型號： | KMB6D0DN30QA |
| 廠商： | KEC Holdings |
| 英文描述： | Dual N-Ch Trench MOSFET |
| 中文描述： | 雙N溝道MOSFET通道 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 477K |
| 代理商： | KMB6D0DN30QA |
2007. 4. 3
2/5
KMB6D0DN30QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25
) UNLESS OTHERWISE NOTED
* Upper electrical characteristics can be changed because these are tentative specifications.
* Graphs are omitted because these are tentative specifications.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250 A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=24V, V
GS
=0V
-
-
1
A
Gate Leakage Current
I
GSS
V
GS
=
25V, V
DS
=0V
-
-
100
A
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=250 A
1
2
3
V
Drain-Source ON Resistance
R
DS(ON)
V
GS
=10.0V, I
D
=6A
-
24
28
m
V
GS
=4.5V, I
D
=4.9A
-
35
42
On-State Drain Current
I
D(ON)
V
DS
=5V, V
GS
=10A
20
-
-
A
Forward Transconductance
G
fs
V
DS
=10V, I
D
=6A
-
20
-
S
Dynamic
(Note 3)
Input Capaclitance
C
iss
V
DS
=15V, f=1MHz, V
GS
=OV
-
740
-
pF
Ouput Capacitance
C
oss
-
170
-
Reverse Transfer Capacitance
C
rss
-
75
-
Total Gate Charge
Q
g
V
DS
=10V, V
GS
=5V, I
D
=6A
-
7
10
nC
Gate-Source Charge
Q
gs
-
3.8
-
Gate-Drain Charge
Q
gd
-
2.5
-
Turn-On Delat Time
t
d(on)
V
DD
=15V, V
GS
=10V
I
D
=1A, R
G
=6
(Note 1)
-
8
16
ns
Turn-On Rise Time
t
r
-
13
24
Turn-On Deley Time
t
d(off)
-
18
29
Turn-On Fall Time
t
r
-
8
6
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
I
DR
=1.7A, V
GS
=0V
-
0.75
1.2
V
Note
1. Pulse Test : Pulse width
10
, Duty cycle
1%
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