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參數(shù)資料
| 型號： | KMB3D5PS30QA |
| 廠商： | KEC Holdings |
| 英文描述： | SBD and P-Ch Trench MOSFET |
| 中文描述： | SBD智能交通和P -溝道MOSFET總 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 479K |
| 代理商： | KMB3D5PS30QA |
2007. 8. 13
2/5
KMB3D5PS30QA
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25
) UNLESS OTHERWISE NOTED
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=-250 A, V
GS
=0V
-30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=-30V, V
GS
=0V
-
-
-1
A
Gate Leakage Current
I
GSS
V
GS
=
20V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=-250 A
-1.0
-
-3.0
V
Drain-Source ON Resistance
R
DS(ON)
V
GS
=-10.0V, I
D
=-2.5A
-
66
85.0
m
V
GS
=-4.5V, I
D
=-1.8A
-
125
180.0
Forward Transconductance
G
fs
V
DS
=-10V, I
D
=-2.5A
-
5.0
-
S
Dynamic
(Note 3)
Input Capaclitance
C
iss
V
DS
=-10V, f=1MHz
-
550
-
pF
Ouput Capacitance
C
oss
-
210
-
Reverse Transfer Capacitance
C
rss
-
50
-
Total Gate Charge
Q
g
V
DS
=-10V, V
GS
=-10V, I
D
=-2.5A
-
8.7
-
nC
Gate-Source Charge
Q
gs
-
1.9
-
Gate-Drain Charge
Q
gd
-
1.3
-
Turn-On Delat Time
t
d(on)
V
DD
=-10V, V
GS
=-10V
I
D
=10
, R
G
=50
(Note 1)
-
7
-
ns
Turn-On Rise Time
t
r
-
9
-
Turn-On Deley Time
t
d(off)
-
14
-
Turn-On Fall Time
t
r
-
8
-
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
I
DR
=-1.7A, V
GS
=0V
-
-
-1.2
V
Note
1. Pulse Test : Pulse width
10
, Duty cycle
1%
SHOTTKY DIODE ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage Drop
V
F
I
F
=1.0A
-
0.45
0.5
V
Reverse Leakage Current
I
R
V
R
=30V
-
0.004
0.1
mA
Junction Capactitance
C
T
V
R
=10V
-
62
-
PF
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