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參數(shù)資料
| 型號： | KMB3D0P30SA |
| 廠商： | KEC Holdings |
| 英文描述： | P-Ch Trench MOSFET |
| 中文描述： | 的P -溝道MOSFET總 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 482K |
| 代理商： | KMB3D0P30SA |
2007. 6. 28
2/5
KMB3D0P30SA
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
DS
=-250 A, V
GS
=0V,
-30
-
-
V
Drain Cut-off Current
I
DSS
V
GS
=0V, V
DS
=-24V
-
-
-1
A
V
GS
=0V, V
DS
=-24V, T
j
=55
-
-
-10
Gate Leakage Current
I
GSS
V
GS
=
20V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=250 A
-1.0
-
-
V
Drain-Source ON Resistance
R
DS(ON)
*
V
GS
=-10V, I
D
=-3A
-
64
80
m
V
GS
=-4.5V, I
D
=-2.5A
-
103
140
Forward Transconductance
g
fs
*
V
DS
=-10V, I
D
=-3A
-
4.5
-
S
Dynamic
Input Capaclitance
C
iss
V
DS
=-15V, V
GS
= 0V, f=1MHz,
-
565
-
pF
Ouput Capacitance
C
oss
-
126
-
Reverse Transfer Capacitance
C
rss
-
75
-
Total Gate Charge
Q
g
*
V
DS
=-15V, V
GS
=-10V, I
D
=-3A
-
10
15
nC
Gate-Source Charge
Q
gs
*
-
1.9
-
Gate-Drain Charge
Q
gd
*
-
2
-
Turn-On Delat Time
t
d(on)
*
V
DD
=-15V, V
GS
=-10V
I
D
=-1A, R
G
=6
-
10
20
ns
Turn-On Rise Time
t
r
*
-
9
20
Turn-On Deley Time
t
d(off)
*
-
27
50
Turn-On Fall Time
t
r
*
-
7
16
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
DR
=-1.25A
-
-
-1.2
V
NOTE 1> * : Pulse Test : Pulse width <300
, Duty cycle < 2%
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