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參數(shù)資料
| 型號： | KMB060N60PA |
| 廠商： | KEC Holdings |
| 英文描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | N通道MOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 493K |
| 代理商： | KMB060N60PA |
2007. 8. 9
2/6
KMB060N60PA
Revision No : 2
MOSFET Electrical Characteristics (Ta=25
Unless otherwise noted)
Note 1) Pulse Test : Pulse width
Note 2) Essentially Independent of Operating Temperature.
10 s, Duty Cycle
1%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250 A, V
GS
=0V
60
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=60V, V
GS
=0V,
-
-
1
A
Gate Leakage Current
I
GSS
V
GS
=
15V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS
, I
D
=250 A
2.0
-
4.0
V
Drain-Source ON Resistance
R
DS(ON)
V
GS
=10V, I
D
=30A
-
11.5
14
Forward Transconductance
g
FS
V
DS
=15V, I
D
=30A
-
20
-
Dynamic
Input Capacitance
C
iss
V
DS
=25V, V
GS
=0V, f=1.0MHz
-
2000
-
pF
Output Capacitance
C
oss
-
360
-
Reverse Transfer Capacitance
C
rss
-
125
-
Total Gate Charge
Q
g
V
DS
= 48V,
V
GS
= 10V,
I
D
=30A (Note1,2)
-
70
-
nC
Gate-Source Charge
Q
gs
-
15
-
Gate-Drain Charge
Q
gd
-
20
-
Turn-On Delay Time
t
d(on)
V
DD
= 30V
I
D
=30A
R
G
= 25
(Note1,2)
-
35
-
Turn-On Rise Time
t
r
-
220
-
ns
Turn-Off Delay Time
t
d(off)
-
55
-
Turn-Off Fall Time
t
r
-
30
-
DIODE Electrical Characteristics (Ta=25
Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Diode Forward Voltage
V
SD
I
SD
=60A, V
GS
=0V
-
-
1.5
V
Reverse Recovery Time
T
rr
V
GS
=0V, I
S
=60A, dIF/dt=100A/ s
-
110
-
701
A
2
2
KMB
060N60P
PRODUCT NAME
LOT NO
1
1
Marking
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