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參數(shù)資料
| 型號： | KMB010P30QA |
| 廠商： | KEC Holdings |
| 英文描述： | P-Ch Trench MOSFET |
| 中文描述： | 的P -溝道MOSFET總 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 475K |
| 代理商： | KMB010P30QA |
2007. 6. 29
2/2
KMB010P30QA
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25
) UNLESS OTHERWISE NOTED
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
DS
=-250 A
-30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=-24V, V
GS
=0V
-
-
-1
A
Gate Leakage Current
I
GSS
V
GS
=
25V, V
DS
=0V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
=V
GS,
I
D
=-250 A
-1.3
-1.9
-2.5
V
Drain-Source ON Resistance
R
DS(ON)*
V
GS
=-10V, I
D
=-10A
-
12
20
m
V
GS
=-4.5V, I
D
=-8A
-
20
28
On-State Drain Current
I
D(ON)*
V
DS
=-5V, V
GS
=-10V
-30
-
-
A
Forward Transconductance
G
fs*
V
DS
=-15V, I
D
=-10A
-
14
-
S
Dynamic
Input Capaclitance
C
iss
V
DS
=-15V, V
GS
=0V, f=1MHz
-
2530
-
pF
Ouput Capacitance
C
oss
-
635
-
Reverse Transfer Capacitance
C
rss
-
445
-
Total Gate Charge
Q
g*
V
DS
=-15V, V
GS
=-10V, I
D
=-10A
-
44.6
-
nC
Gate-Source Charge
Q
gs*
-
7.7
-
Gate-Drain Charge
Q
gd*
-
11.5
-
Turn-On Delat Time
t
d(on)*
V
DD
=-15V, V
GS
=-10V
R
L
=1.25
, R
G
=6
-
10.2
-
ns
Turn-On Rise Time
t
r*
-
6.3
-
Turn-On Deley Time
t
d(off)*
-
22.5
-
Turn-On Fall Time
t
r*
-
10.6
-
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF*
V
GS
=0V, I
DR
=-1.7A,
-
-0.73
-1.2
V
Note
1. Pulse Test : Pulse width
10
, Duty cycle
1%
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