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參數(shù)資料
| 型號： | KM718V687 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx18 Synchronous SRAM(64Kx18位同步靜態(tài) RAM) |
| 中文描述： | 64Kx18同步SRAM（64Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 5/15頁 |
| 文件大小： | 342K |
| 代理商： | KM718V687 |
PRELIMINARY
KM718V687
64Kx18 Synchronous SRAM
- 5 -
Rev 1.0
May 1997
SYNCHRONOUS TRUTH TABLE
NOTE
: 1. X means "Don
′
t Care".
2. The rising edge of clock is symbolized by
↑
.
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
CS
1
CS
2
CS
2
ADSP ADSC
ADV
WRITE
CLK
Address Accessed
Operation
H
X
X
X
L
X
X
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
N/A
Not Selected
L
L
X
L
X
X
X
N/A
Not Selected
L
X
H
L
X
X
X
N/A
Not Selected
L
L
X
X
L
X
X
N/A
Not Selected
L
X
H
X
L
X
X
N/A
Not Selected
L
H
L
L
X
X
X
External Address
Begin Burst Read Cycle
L
H
L
H
L
X
L
External Address
Begin Burst Write Cycle
L
H
L
H
L
X
H
External Address
Begin Burst Read Cycle
X
X
X
H
H
L
H
Next Address
Continue Burst Read Cycle
H
X
X
X
H
L
H
Next Address
Continue Burst Read Cycle
X
X
X
H
H
L
L
Next Address
Continue Burst Write Cycle
H
X
X
X
H
L
L
Next Address
Continue Burst Write Cycle
X
X
X
H
H
H
H
Current Address
Suspend Burst Read Cycle
H
X
X
X
H
H
H
Current Address
Suspend Burst Read Cycle
X
X
X
H
H
H
L
Current Address
Suspend Burst Write Cycle
H
X
X
X
H
H
L
Current Address
Suspend Burst Write Cycle
WRITE TRUTH TABLE
NOTE
: 1. X means "Don
′
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(
↑
).
GW
BW
WEa
WEb
Operation
H
H
X
X
READ
H
L
H
H
READ
H
L
L
H
WRITE BYTE a
H
L
H
L
WRITE BYTE b
H
L
L
L
WRITE ALL BYTEs
L
X
X
X
WRITE ALL BYTEs
ABSOLUTE MAXIMUM RATINGS*
*NOTE
: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+ 0.5
V
Power Dissipation
P
D
1.2
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
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