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參數(shù)資料
| 型號： | KM29W8000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 8 Bit NAND Flash Memory(1M x 8 位 NAND閃速存儲器) |
| 中文描述： | 100萬× 8位NAND快閃記憶體（1米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 266K |
| 代理商： | KM29W8000IT |
KM29W8000T, KM29W8000IT
FLASH MEMORY
10
Error in program or erase operation
The device may fail during a program or erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
KM29W8000 Technical Notes
(Continued)
Failure Mode
Detection and Countermeasure sequence
Block
Erase Failure
Status Read after Erase --> Block Replacement
Page
Program Failure
Status Read after Program --> Block Replacement
Single Bit
Program Failure
("1" --> "0")
Block Verify after Program --> Retry or ECC
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Block Replacement
When the error happens in Block "A", try to reprogram
the data into another Block "B" by reloading from an
external buffer. Then, prevent further system access to
Block "A"(by creating a "bad block" table or other appro-
priate scheme.)
During Program operation ;
During Erase operation ;
When the error occurs after an erase operation, prevent future accesses to this bad block
(again by creating a table within the system or other appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
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