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參數(shù)資料
| 型號： | KM29W8000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 8 Bit NAND Flash Memory(1M x 8 位 NAND閃速存儲器) |
| 中文描述： | 100萬× 8位NAND快閃記憶體（1米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 1/23頁 |
| 文件大?。?/td> | 266K |
| 代理商： | KM29W8000IT |
KM29W8000T, KM29W8000IT
FLASH MEMORY
1
Document Title
1M x 8 bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you ha ve
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
1.1
Remark
Advance
Preliminary
Final
History
Data Sheet 1997
Data Sheet 1998
1. Changed t
BERS
parameter : 5ms(Typ.)
→
2ms(Typ.)
10ms(Max.)
→
4ms(Max.)
2. Changed t
PROG
parameter : 1.5ms(Max.)
→
1.0ms(Max.)
Data sheet 1998
1. Cjanged DC and Operating Characteristics
Parameter
Vcc=2.7V~3.6V
Vcc=3.6V~5.5V
Unit
Typ
Max
Typ
Max
Operting
Current
Burst Read
10
→
5
20
→
10
15
→
10
30
→
20
mA
Program
10
→
5
20
→
10
15
→
10
30
→
20
Erase
10
→
5
20
→
10
15
→
10
30
→
20
Stand-by Current (CMOS)
5
→
10
50
10
100
→
50
μ
A
Input Leakage Current
-
10
→ ±
10
-
10
→ ±
10
Output Leakage Current
-
10
→ ±
10
-
10
→ ±
10
Draft Date
April 10th 1997
April 10th 1998
July 14th 1998
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