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參數(shù)資料
| 型號(hào)： | KM29W32000TS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 7/24頁(yè) |
| 文件大?。?/td> | 301K |
| 代理商： | KM29W32000TS |
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KM29W32000TS
FLASH MEMORY
7
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
CLE
ALE
CE
WE
RE
SE
WP
Mode
H
L
L
H
X
X
Read Mode
Command Input
L
H
L
H
X
X
Address Input(3clock)
H
L
L
H
X
H
Write Mode
Command Input
L
H
L
H
X
H
Address Input(3clock)
L
L
L
H
L/H
(3)
H
Data Input
L
L
L
H
L/H
(3)
X
Sequential Read & Data Output
L
L
L
H
H
L/H
(3)
X
During Read(Busy)
X
X
X
X
X
L/H
(3)
H
During Program(Busy)
X
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
CAPACITANCE
(T
A
=25
°
C, Vcc=5.0V f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.25
1.5
ms
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
10
ms
AC TEST CONDITION
(T
A
=0
°
C to +70
°
C, V
CC
=2.7V ~ 5.5V, unless otherwise noted.)
Parameter
Value
Vcc=2.7V ~ 3.6V
Vcc=3.6V ~ 5.5V
Input Pulse Levels
0.4V to 2.4V
0.4V to 3.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load
1 TTL GATE and
1 TTL GATE and CL = 100pF
CL = 50pF(3.0V+/-10%),100pF(3.0V~3.6V)
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