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參數(shù)資料
| 型號： | KM29V16000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲器) |
| 中文描述： | 200萬× 8位NAND閃存（2米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 3/23頁 |
| 文件大?。?/td> | 268K |
| 代理商： | KM29V16000AT |
KM29V16000AT, KM29V16000AIT
FLASH MEMORY
3
256B Column
8B Column
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
NOTE
: A12 to A20 : Block Address * : X can be V
IL
or V
IH
.
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
3rd Cycle
A
16
A
17
A
18
A
19
A
20
*X
*X
*X
X-Buffers
Latches
& Decoders
16M + 512K Bit
NAND Flash
ARRAY
Command
Register
(256 + 8)Byte x 8192
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
A
8
- A
20
A
0
- A
7
Command
CE
RE
WE
CLE ALE WP
I/0
0
I/0
7
16M : 8K Row
(=512 Block)
256Byte
8 bit
8Byte
1 Block (=16 Row)
(4K + 128)Byte
I/O
0
~I/O
7
1 Page = 264 Byte
1 Block = 264 B x 16 Pages
= (4K + 128) Bytes
1 Device = 264B x 16Pages x 512 Blocks
= 16.5 Mbits
Column Address
Row Address
(Page Address)
Page Register
VccQ
Vss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V32000IT | FLASH MEMORY |
| KM29V32000TS | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| KM29V32000T | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| KM29V64000R | FLASH |
| KM29V64000TS | 8M X 8 BIT NAND FLSH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V16000ATS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V32000IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V32000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V32000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M X 8 BIT NAND FLASH MEMORY |
| KM29V64000R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH |
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