參數(shù)資料
型號(hào): KM29V040IT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器)
中文描述: 為512k × 8位NAND閃存(為512k × 8位的NAND閃速存儲(chǔ)器)
文件頁(yè)數(shù): 6/21頁(yè)
文件大小: 223K
代理商: KM29V040IT
KM29V040T, KM29V040IT
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Burst Read Cycle
I
CC1
tcycle=120ns
CE=V
IL
, I
OUT
=0mA
-
5
10
mA
Command, Address Input
I
CC3
tcycle=120ns
-
5
10
mA
Data Input
I
CC4
tcycle=120ns
-
5
10
mA
Program
I
CC5
-
-
5
10
mA
Erase
I
CC6
-
-
5
10
mA
Stand-by Current(TTL)
I
SB1
CE=V
IH
, WP=0V/V
CC
-
-
1
mA
Stand-by Current(CMOS)
I
SB2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
μ
A
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
10
Input High Voltage, All inputs
V
IH
-
2.4
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.6
V
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
V
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to +5.5
V
Temperature Under Bias
KM29V040T
T
BIAS
-10 to +125
°
C
KM29V040IT
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, KM29V040T
:
T
A
=0 to 70
°
C, KM29V040IT
:
T
A
=-45 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
相關(guān)PDF資料
PDF描述
KM29V040T 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器)
KM29V16000AIT FLASH MEMORY
KM29V16000ARS 2M X 8 BIT NAN FLASH MEMORY
KM29V16000AR 2M X 8 BIT NAND FLASH MEMORY
KM29V16000ATS 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND 閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29V16000AIT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000AR 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY
KM29V16000ARS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY
KM29V16000AT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000ATS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY