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參數(shù)資料
| 型號： | KM29V040IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| 中文描述： | 為512k × 8位NAND閃存（為512k × 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 3/21頁 |
| 文件大小： | 223K |
| 代理商： | KM29V040IT |
KM29V040T, KM29V040IT
FLASH MEMORY
3
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
NOTE
: *
(1)
: X can be V
IL
or V
IH
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
3rd Cycle
A
16
A
17
A
18
X*
(1)
X*
X*
*X
*X
Column Address (A
0
-A
4
)
Frame Address (A
5
-A
6
)
Row Address (A
7
-A
11
)
Block Address (A
12
-A
18
)
128Byte Column
4M : 4K Row
(=128 Blocks)
32 Byte
8 bit
Good Block
I/O
0
~ I/O
7
1 Frame = 32 Byte
1 Row = 4 Frames = 128 Bytes
1 Block = 32 rows = 4K Bytes
1 Device = 32B x 4frames x 32rows x 128blocks
= 4Mbits
Frame Register
1
2
3
4
X-Buffers
Latches
& Decoders
4M Bit
Command
Register
NAND Flash ARRAY
32Byte x 4frame x 4096row
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
A
7
- A
18
A
0
- A
6
Command
CE
RE
WE
CLE ALE WP
I/O
0
I/O
7
The 1st Block (4KB)
1Block(32Row)
(4K Byte)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V040T | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29V16000AIT | FLASH MEMORY |
| KM29V16000ARS | 2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AR | 2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ATS | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND 閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000ATS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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