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參數(shù)資料
| 型號： | KM29V040IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| 中文描述： | 為512k × 8位NAND閃存（為512k × 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 17/21頁 |
| 文件大小： | 223K |
| 代理商： | KM29V040IT |
KM29V040T, KM29V040IT
FLASH MEMORY
17
FRAME PROGRAM
The device is programmed on a frame basis. The addressing may be done in random order in a block. A frame program cycle consist
of a serial data loading period in which up to 32 bytes of data must be loaded into the device, and a nonvolatile programming p eriod
in which the loaded data is programmed into the appropriate cells.
The sequential data loading period begins by inputting the frame program setup command(80H), followed by the three cycle address
input and then sequential data loading. The bytes other than those to be programmed do not need to be loaded.
The frame Program confirm command(10H) initiates the programming process. Writing 10H alone without previously entering the
serial data will not initiate the programming process. The internal write controller automatically executes the algorithms and t imings
necessary for program and verify, thereby freeing the CPU for other tasks. The CPU can detect the completion of a program cycle by
monitoring the R/B output, or the Status bit(I/O
6
) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the frame Program is complete, the Write Status Bit(I/O
0
) may be checked. The inter-
nal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Sta-
tus command mode until another valid command is written to the command register.
Figure 4. Frame Program Operation
80H
A
0
~A
7
& A
8
~A
18
32 Byte Data
I/O
0
~
7
R/B
Address & Data Input
10H
FRAME PROGRAM
While the frame size of the device is 32 Bytes, not all the bytes in a frame have to be programmed at once. The device supports par-
tial frame programming in which a frame may be partially programmed up to 10 separate program operations. The program size in
each of the 10 partial program operations is freely determined by the user and do not have to be equal to each other or to any p reset
size. However, the user should ensure that the partial program units within a frame do not overlap as "0" data cannot be changed to
"1" data without an erase operation. To perform a partial frame program operation, the user only writes the partial frame data t hat is
to programmed. Just as in the standard frame program operation, an 80H command is followed by start address data. However, only
the partial program data need be divided when programming a frame in 10 partial program operations.
Figure 5. Example of Dividing a Frame into 10 Partial Program Units
FA
A2
43
CB
81
28
E0
2A
D5
- - - - - -
32
B5
7D
6F
AA
E1
D7
C0
Single
Frame
1st partial program start address (00h)
2nd partial program start address (04h)
3rd partial program start address (06h)
: : : : : :
9th partial program start address (18h)
10th partial program start address (1Fh)
10th partial frame program data
9th partial frame program data
3rd partial frame program data
2nd partial frame program data
1st partial frame program data
: : : : : :
t
PROG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V040T | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29V16000AIT | FLASH MEMORY |
| KM29V16000ARS | 2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AR | 2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ATS | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND 閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000ATS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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