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參數(shù)資料
| 型號(hào)： | KM29U64000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory |
| 中文描述： | 8米× 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 7/26頁(yè) |
| 文件大?。?/td> | 481K |
| 代理商： | KM29U64000IT |
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KM29U64000T, KM29U64000IT
FLASH MEMORY
7
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
CLE
ALE
CE
WE
RE
SE
WP
Mode
H
L
L
H
X
X
Read Mode
Command Input
L
H
L
H
X
X
Address Input(3clock)
H
L
L
H
X
H
Write Mode
Command Input
L
H
L
H
X
H
Address Input(3clock)
L
L
L
H
L/H
(3)
H
Data Input
L
L
L
H
L/H
(3)
X
Sequential Read & Data Output
L
L
L
H
H
L/H
(3)
X
During Read(Busy)
X
X
X
X
X
L/H
(3)
H
During Program(Busy)
X
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
CAPACITANCE
(
T
A
=25
°
C, V
CC
=3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The KM29U64000 may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaran-
teed though its initial number could be reduced. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1014
1020
1024
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
1000
μ
s
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
4
ms
AC TEST CONDITION
(KM29U64000T:T
A
=0 to 70
°
C, KM29U64000IT:T
A
=-40 to 85
°
C,
V
CC
=2.7V~3.6V
unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load (3.0V +/-10%)
1 TTL GATE and CL = 50pF
Output Load (3.3V +/-10%)
1 TTL GATE and CL = 100pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29U64000T | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
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| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
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