- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374352 > KM29U64000IT (SAMSUNG SEMICONDUCTOR CO. LTD.) 8M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | KM29U64000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory |
| 中文描述： | 8米× 8位NAND閃存 |
| 文件頁數(shù)： | 24/26頁 |
| 文件大?。?/td> | 481K |
| 代理商： | KM29U64000IT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當(dāng)前第24頁第25頁第26頁
KM29U64000T, KM29U64000IT
FLASH MEMORY
24
Figure 9. Read ID Operation
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address input of
00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (E6H) respectively. The command regis-
ter remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
CE
CLE
I/O
0
~
7
ALE
RE
WE
90H
00
ECH
E6H
Address. 1 cycle
Maker code
Device code
t
CR
t
AR1
t
READID
Figure 10. RESET Operation
RESET
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70H command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
dose not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00H or 50H) should be given before sequential page read cycle.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFH
I/O
0
~
7
R/B
Table3. Device Status
t
RST
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29U64000T | 8M x 8 Bit NAND Flash Memory |
| KM29U64000K1 | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| KM29V040IT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29V040T | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29V16000AIT | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。