參數(shù)資料
型號(hào)： KM29N16000AIT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2Mx8 Bit NAND Flash Memory(2Mx8位 NAND閃速存儲(chǔ)器)
中文描述： 2Mx8位NAND閃存（2Mx8位的NAND閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 21/23頁(yè)
文件大?。?/td> 267K
代理商： KM29N16000AIT
KM29N16000AT, KM29N16000AIT
FLASH MEMORY
21
Figure 9. Read ID Operation
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address inpu t of
00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (Note*) respectively. The command reg-
ister remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
CE
CLE
I/O
0 ~ 7
ALE
RE
WE
90H
Address. 1 cycle
Dout(ECH)
Dout(Note*)
A
0
~ A
7
:"0"
Maker code
Device code
t
CR
t
AR1
t
REA
Note* KM29V16000 : EAH
KM29N16000 : 64H
KM29W16000 : EAH
Figure 10. RESET Operation
RESET
The device offers a reset feature, executed by writing FFH to the command register. When the device is in Busy state during rand om
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0H when WP is high. Refer to table 3 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/ B pin transitions to low for tRST
after the Reset command is written. Reset command is not necessary for normal operation. Refer to Figure 10 below.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFH
I/O
0 ~ 7
R/B
Table3. Device Status
t
RST
相關(guān)PDF資料
PDF描述
KM29N16000AT 2Mx8 Bit NAND Flash Memory(2Mx8位 NAND閃速存儲(chǔ)器)
KM29N16000ATS 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器)
KM29N32000IT 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器)
KM29N32000T 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器)
KM29N32000TS 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29U128IT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
KM29U128T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
KM29U64000IT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29U64000T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29V16000AIT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*