參數(shù)資料
型號(hào)： KBE00S003M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb NAND*2 + 256Mb Mobile SDRAM*2
中文描述： 1Gb的NAND * 2 256Mb的移動(dòng)SDRAM * 2
文件頁(yè)數(shù)： 47/86頁(yè)
文件大?。?/td> 1808K
代理商： KBE00S003M
MCP MEMORY
47
KBE00S003M-D411
Revision 1.0
May 2005
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next
higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
Parameter
Symbol
KBE00S003M-D411
111MHz@CL3
Unit
Note
Row active to row active delay
t
RRD
(min)
18
ns
1
RAS to CAS delay
t
RCD
(min)
27
ns
1
Row precharge time
t
RP
(min)
27
ns
1
Row active time
t
RAS
(min)
50
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
77
ns
1
Last data in to row precharge
t
RDL
(min)
15
ns
2
Last data in to Active delay
t
DAL
(min)
tRDL + tRP
-
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Auto refresh cycle time
t
ARFC
(min)
80
ns
Exit self refresh to active command
t
SRFX
(min)
120
ns
Col. address to col. address delay
t
CCD
(min)
1
CLK
3
Number of valid output data
CAS latency=3
2
ea
4
Number of valid output data
CAS latency=2
1
Number of valid output data
CAS latency=1
0
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KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
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