參數(shù)資料
型號(hào)： K9K1G08U0M-YIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit NAND Flash Memory
中文描述： 128M的× 8位NAND閃存
文件頁(yè)數(shù)： 7/37頁(yè)
文件大?。?/td> 467K
代理商： K9K1G08U0M-YIB0
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
7
Dc and Operating Characteristics
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
, I
OUT
=0mA
-
10
30
mA
Program
I
CC
2
-
-
10
30
Erase
I
CC
3
-
-
10
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP= 0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP = 0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
±
10
Input High Voltage
V
IH
-
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
Recommended Operating Conditions
(Voltage reference to GND, K9K1G08U0M-YCB0
:
T
A
=0 to 70
°
C, K9K1G08U0M-YIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
Absolute Maximum Ratings
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
Temperature Under Bias
K9K1G08U0M-YCB0
T
BIAS
-10 to +125
°
C
K9K1G08U0M-YIB0
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
相關(guān)PDF資料
PDF描述
K9K2G08U0A TV 8C 8#16 PIN WALL RECP
K9K2G08U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-E SSR H/S ZS 600V 50A 4-32VDC
K9XXG08UXM-K 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-P SSR H/S ZS 600V 70A 4-32VDC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G16Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K2G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*