參數(shù)資料
型號(hào): K9K1G08U0M-YIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit NAND Flash Memory
中文描述: 128M的× 8位NAND閃存
文件頁數(shù): 23/37頁
文件大?。?/td> 467K
代理商: K9K1G08U0M-YIB0
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
23
Read ID Operation
CE
CLE
I/O 0 ~ 7
WE
ALE
RE
90h
Read ID Command
Maker Code
Device Code
00h
ECh
79h
t
REA
Address. 1cycle
A5h
C0h
Multi Plane Code
ID Defintition Table
90 ID: Access command = 90H
Value
Description
1
st
Byte
2
nd
Byte
3
rd
Byte
4
th
Byte
ECh
79h
A5h
C0h
Maker Code
Device Code
Must be don’ t -cared
Supports Multi Plane Operation
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