參數(shù)資料
型號(hào): K9K1G08U0M-YIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit NAND Flash Memory
中文描述: 128M的× 8位NAND閃存
文件頁(yè)數(shù): 14/37頁(yè)
文件大?。?/td> 467K
代理商: K9K1G08U0M-YIB0
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
14
System Interface Using CE don’ t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(4Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
0
~
7
Data Input
CE don’ t-care
10h
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Start Add.(4Cycle)
00h
CE
CLE
ALE
WE
I/O
0
~
7
Data Output(sequential)
CE don’ t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 6. Program Operation with CE don’ t-care.
Figure 7. Read Operation with CE don’t-care.
Must be held
low during tR.
相關(guān)PDF資料
PDF描述
K9K2G08U0A TV 8C 8#16 PIN WALL RECP
K9K2G08U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-E SSR H/S ZS 600V 50A 4-32VDC
K9XXG08UXM-K 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-P SSR H/S ZS 600V 70A 4-32VDC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G16Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K2G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory