參數(shù)資料
型號： K9K1208U0A-YCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 16C 16#16 SKT RECP
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 7/27頁
文件大?。?/td> 357K
代理商： K9K1208U0A-YCB0
K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
7
VALID BLOCK
NOTE
:
1. The
K9K1208U0A
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
. Do not try
to access these invalid blocks for program and erase.
Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
4,026
-
4,096
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
2
cycles
Spare Array
-
-
3
cycles
Block Erase Time
t
BERS
-
2
3
ms
CAPACITANCE
(
T
A
=25
°
C, V
CC
=3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
30
pF
Input Capacitance
C
IN
V
IN
=0V
-
30
pF
AC TEST CONDITION
(K9K1208U0A-YCB0 :TA=0 to 70
°
C, K9K1208U0A-YIB0:TA=-40 to 85
°
C, VCC=2.7V~3.6V unless otherwise)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load (3.0V +/-10%)
1 TTL GATE and CL=50pF
Output Load (3.3V +/-10%)
1 TTL GATE and CL=100pF
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(4clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(4clock)
L
L
L
H
H
Data Input
L
L
L
H
X
sequential Read & Data Output
L
L
L
H
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
相關(guān)PDF資料
PDF描述
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1208U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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