參數(shù)資料
型號： K9K1208U0A-YCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 16C 16#16 SKT RECP
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 6/27頁
文件大?。?/td> 357K
代理商： K9K1208U0A-YCB0
K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=60ns, CE=V
IL
, I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
15
25
Erase
I
CC
3
-
-
15
25
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
±
10
Input High Voltage
V
IH
-
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K1208U0A-YCB0
:
T
A
=0 to 70
°
C, K9K1208U0A-YIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
Temperature Under Bias
K9K1208U0A-YCB0
T
BIAS
-10 to +125
°
C
K9K1208U0A-YIB0
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
相關PDF資料
PDF描述
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
K9K1208U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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