參數(shù)資料
型號： K9F8008W0M-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 100萬× 8位NAND快閃記憶體
文件頁數(shù)： 21/25頁
文件大?。?/td> 445K
代理商： K9F8008W0M-TCB0
K9F8008W0M-TCB0, K9F8008W0M-TIB0
FLASH MEMORY
21
Figure 6. Sequential Row Read2 Operation
PAGE PROGRAM
The device is programmed basically on a page basis. But it also allows multiple partial page programming of a byte or consecutive
bytes up to 264 may be programmed in a single page program cycle. The number of partial page programming operation in the same
page without an intervening erase operation must not exceed ten. The addressing may be done in any random order in a block. A
page program cycle consist of a serial data loading period in which up to 264 bytes of data must be loaded into the device, and non-
volatile programming period in which the loaded data is programmed into the appropriate cell.
The sequential data loading period begins by inputting the Serial Data Input command(80H), followed by the three cycle address
input and then serial data loading. The bytes other than those to be programmed do not need to be loaded.
In order to program the bytes in the spare columns of 256 to 263, the pointer should be set to the spare area by writing the Read 2
command(50H) to the command register. The pointer remains in the spare area unless the Read 1 command(00H) is entered to
retum to the main area. The Page Program confirm command(10H) initiates the programming process. Writing 10H alone without
previously entering the serial data will not initiate the programming process. The internal write controller automatically executes the
algorithms and timings necessary for program and verify, thereby freeing the CPU for other tasks. Once the program process starts,
the Status Register may be read RE and CE low after the Read Status command(70H) is written to it. The CPU can detect the com-
pletion of program cycle by monitoring the R/B output, or the Status bit(I/O
6
) of the Status Register. Only the Read Status command
and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O
0
) may
be checked(Figure 7). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The com-
mand register remains in Read Status command mode until another valid command is written to the command register.
50H
A
0
~ A
2
& A
8
~ A
19
I/O
0
~
7
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
2nd
(8Byte)
Nth
(8Byte)
Data Field
Spare Field
1st
2nd
Nth
(A
3
~ A
7
:
Don
t Care)
1st
Figure 7. Program & Read Status Operation
80H
A
0
~ A
7
& A
8
~ A
19
264 Byte Data
I/O
0
~
7
R/B
Address & Data Input
I/O
0
Pass
10H
70H
Fail
t
R
t
R
t
R
t
PROG
≈
相關(guān)PDF資料
PDF描述
K9F8008W0M-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9K1208U0A-YCB0 TV 16C 16#16 SKT RECP
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F8008W0M-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8G08U0M-PCK0000 制造商:Samsung 功能描述:K9F8G08U0M-PCK0000NAND FLASH - Trays
K9G4G08B0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9G4G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9G4G08U0A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
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