參數(shù)資料
型號(hào)： K9F8008W0M-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 100萬(wàn)× 8位NAND快閃記憶體
文件頁(yè)數(shù)： 10/25頁(yè)
文件大?。?/td> 445K
代理商： K9F8008W0M-TCB0
K9F8008W0M-TCB0, K9F8008W0M-TIB0
FLASH MEMORY
10
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
SR. 6 = 1
or R/B = 1
Write 00H
SR. 0 = 0
No
*
If ECC is used, this verification
operation is not needed.
Write 80H
Write Address
Write Data
Write 10H
Write 70H
Write Address
Wait for tR Time
Verify Data
No
Program Completed
Program Error
Yes
No
Yes
*
Program Error
Yes
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Error in write or read operation
Over its life time, the additional invalid blocks may occur. Through the tight process control and intensive testing, Samsung mini-
mizes the additional block failure rate, which is projected below 0.1% up until 1million program/erase cycles. Refer to the qualification
report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the
case of status read failure after erase or program, block replacement should be done. To improve the efficiency of memory space, it
is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The
said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
相關(guān)PDF資料
PDF描述
K9F8008W0M-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9K1208U0A-YCB0 TV 16C 16#16 SKT RECP
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F8008W0M-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8G08U0M-PCK0000 制造商:Samsung 功能描述:K9F8G08U0M-PCK0000NAND FLASH - Trays
K9G4G08B0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9G4G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9G4G08U0A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
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