參數(shù)資料
型號(hào)： K9F8008W0M-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 100萬× 8位NAND快閃記憶體
文件頁數(shù)： 7/25頁
文件大小： 445K
代理商： K9F8008W0M-
K9F8008W0M-TCB0, K9F8008W0M-TIB0
FLASH MEMORY
7
CAPACITANCE
(
T
A
=25
°
C, V
CC
=5.0V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The K
K9F8008W0M
may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
invalid blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are
guaranteed though its initial number could be reduced. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
251
-
256
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.25
1.0
ms
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
4
ms
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Sequential Read & Data Output
L
L
L
H
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
AC TEST CONDITION
(K9F8008W0M-TCB0:T
A
=0 to 70
°
C
, K9F8008W0M-TIB0:T
A
=-40 to 85
°
C
,
V
CC
=2.7V ~ 5.5V unless otherwise noted)
Parameter
Value
Vcc = 2.7V ~ 3.6V
Vcc = 3.6V ~ 5.5V
Input Pulse Levels
0.4V to 2.6V
0.4V to 2.6V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load
1TTL GATE & CL=50pF(3.0V+/-10%)
1 TTL GATE and CL = 100pF
1TTL GATE & CL=100pF(3.0V~3.6V)
相關(guān)PDF資料
PDF描述
K9F8008W0M-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F8008W0M-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9K1208U0A-YCB0 TV 16C 16#16 SKT RECP
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F8008W0M-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8008W0M-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8G08U0M-PCK0000 制造商:Samsung 功能描述:K9F8G08U0M-PCK0000NAND FLASH - Trays
K9G4G08B0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9G4G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
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