參數(shù)資料
型號(hào)： K9F8008W0M-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 100萬(wàn)× 8位NAND快閃記憶體
文件頁(yè)數(shù)： 19/25頁(yè)
文件大?。?/td> 445K
代理商： K9F8008W0M-
K9F8008W0M-TCB0, K9F8008W0M-TIB0
FLASH MEMORY
19
DEVICE OPERATION
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00H to the command reg-
ister along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera-
tion. Three types of operations are available : random read, sequential page read and sequential row read.
The random read mode is enabled when the page address is changed. The 264 bytes of data within the selected page are trans-
ferred to the data registers in less than 10
μ
s(t
R
). The CPU can detect the completion of this data transfer(t
R
) by analyzing the output
of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 80ns cycle time by sequentially pulsing RE
with CE staying low. High to low transitions of the RE clock output the data starting from the selected column address up to the last
column address(column 264).
After the data of last column address is clocked out, the next page is automatically selected for sequential read.
Waiting 10
μ
s again allows for reading of the page. The sequential row read operation is terminated by bringing CE to high. The way
the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 256 to
263 may be selectively accessed by writing the Read2 command. Addresses A
0
to A
2
set the starting address of the spare area while
addresses A
3
to A
7
are ignored. Unless the operation is aborted, the page address is automatically incremented for sequential row
read as in Read1 operation and spare eight bytes of each page may be sequentially read. The Read1 command(00H) is needed to
move the pointer back to the main area. Figures 3 thru 6 show typical sequence and timings for each read operation.
Figure 3. Read1 Operation
Start Add.(3Cycle)
00H
A
0
~ A
7
& A
8
~ A
19
Data Output(Sequential)
(00H Command)
Seek Time
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
相關(guān)PDF資料
PDF描述
K9F8008W0M-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F8008W0M-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9K1208U0A-YCB0 TV 16C 16#16 SKT RECP
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory
K9K1208U0M 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F8008W0M-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8008W0M-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8G08U0M-PCK0000 制造商:Samsung 功能描述:K9F8G08U0M-PCK0000NAND FLASH - Trays
K9G4G08B0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9G4G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
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