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參數(shù)資料
| 型號： | K9F4G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| 中文描述： | 512M x 8位/ 1克× 8位NAND閃存 |
| 文件頁數(shù)： | 39/41頁 |
| 文件大?。?/td> | 1076K |
| 代理商： | K9F4G08U0M |
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FLASH MEMORY
39
Advance
K9F4G08U0M
K9K8G08U1M
Figure 18. Read ID Operation
CE
CLE
I/O
X
ALE
RE
WE
90h
00h
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and 3rd, 4th cycle ID respectively. The
command register remains in Read ID mode until further commands are issued to it. Figure 18 shows the operation sequence.
Device
Code*
4th Cyc.*
Figure 19. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. If the device is already in reset state a new reset command will be
accepted by the command register. The R/B pin changes to low for tRST after the Reset command is written. Refer to Figure 19
below.
FFh
I/O
X
R/B
t
RST
t
WHR
t
CLR
Device
Device Code*(2nd Cycle)
3rd Cycle*
4th Cycle*
K9F4G08U0M
DCh
10h
95h
K9K8G08U1M
Same as each K9F4G08U0M in it
ECh
3rd Cyc.*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9F5608Q0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4G08U0M-PCB0 | 制造商:Samsung Semiconductor 功能描述: |
| K9F4G08U0M-PCB0000 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F4G08U0M-PCB0T00 | 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays |
| K9F5608D0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608D0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
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