參數(shù)資料
型號(hào): K9F4G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述: 512M x 8位/ 1克× 8位NAND閃存
文件頁數(shù): 30/41頁
文件大?。?/td> 1076K
代理商: K9F4G08U0M
FLASH MEMORY
30
Advance
K9F4G08U0M
K9K8G08U1M
4th ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
Page Size
(w/o redundant area )
1KB
2KB
Reserved
Reserved
0 0
0 1
1 0
1 1
Block Size
(w/o redundant area )
64KB
128KB
256KB
Reserved
0 0
0 1
1 0
1 1
Redundant Area Size
( byte/512byte)
8
16
0
1
Organization
x8
x16
0
1
Serial AccessMinimum
50ns
25ns
Reserved
Reserved
0
1
0
1
0
0
1
1
ID Definition Table
90 ID : Access command = 90H
Description
1
st
Byte
2
nd
Byte
3
rd
Byte
4
th
Byte
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
3rd ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3 I/O2
I/O1 I/O0
Internal Chip Number
1
2
4
8
0 0
0 1
1 0
1 1
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
0 0
0 1
1 0
1 1
Number of
Simultaneously
Programmed Pages
1
2
4
8
0 0
0 1
1 0
1 1
Interleave Program
Between multiple chips
Not Support
Support
0
1
Cache Program
Not Support
Support
0
1
相關(guān)PDF資料
PDF描述
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F4G08U0M-PCB0 制造商:Samsung Semiconductor 功能描述:
K9F4G08U0M-PCB0000 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F4G08U0M-PCB0T00 制造商:Samsung 功能描述:4GB SLC NORMAL X8 TSOP1 - Trays
K9F5608D0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory