參數(shù)資料
型號： K5A3380YBC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數(shù)： 42/45頁
文件大?。?/td> 625K
代理商： K5A3380YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 42 -
Preliminary
SRAM TIMING DIAGRAMS
Address
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS1
S
=OE=V
IL
, CS2
S
=WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS1
S
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO1
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CS2
S
t
CO2
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