參數(shù)資料
型號： K5A3380YBC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數(shù)： 26/45頁
文件大?。?/td> 625K
代理商： K5A3380YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 26 -
Preliminary
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to Vss)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
Vcc
F
, Vcc
S
Vss
2.7
3.0
3.3
V
Supply Voltage
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Minimum DC voltage is -0.3V on Input/ Output balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on
input / output balls is Vcc+0.3V(Max. 3.6V) which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Minimum DC voltage is -0.3V on RESET and WP/ACC balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC
voltage on RESET and WP/ACC balls are 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any ball relative to Vss
Vcc
Vcc
F
, Vcc
S
-0.3 to +3.6
V
RESET
V
IN
-0.3 to +12.5
WP/ACC
-0.3 to +12.5
All Other Balls
-0.3 to Vcc+0.3V(Max.3.6V)
Temperature Under Bias
T
bias
-40 to +125
°
C
°
C
Storage Temperature
T
stg
-65 to +150
Operating Temperature
T
A
-40 to +85
°
C
DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Common
Input Leakage Current
I
LI
V
IN
=Vss to Vcc, Vcc=Vcc
max
-1.0
-
+1.0
μ
A
μ
A
Output Leakage Current
I
LO
V
OUT
=Vss to Vcc, Vcc=Vcc
max,
OE=V
IH
-1.0
-
+1.0
Input Low Level
V
IL
-0.3
-
0.5
V
Input High Level
V
IH
2.2
-
Vcc
+0.3
V
Output Low Level
V
OL
I
OL
= 2.1mA, Vcc = Vcc
min
-
-
0.4
V
Output High Level
V
OH
I
OH
= -1.0mA, Vcc = Vcc
min
2.3
-
-
V
Flash
RESET Input Leakage Current
I
LIT
Vcc
F
=Vcc
max,
RESET=12.5V
-
-
35
μ
A
WP/ACC Input Leakage Current
I
LIW
Vcc
F
=Vcc
max,
WP/ACC=12.5V
-
-
35
μ
A
Active Read Current (1)
I
CC
1
CE
F
=V
IL
, OE=V
IH
5MHz
-
14
20
mA
1MHz
-
3
6
Active Write Current (2)
I
CC
2
CE
F
=V
IL
, OE=V
IH
-
15
30
mA
Read While Program Current (3)
I
CC
3
CE
F
=V
IL
, OE=V
IH
-
25
50
mA
Read While Erase Current (3)
I
CC
4
CE
F
=V
IL
, OE=V
IH
-
25
50
mA
Program While Erase Suspend
Current
I
CC
5
CE
F
=V
IL
, OE=V
IH
-
15
35
mA
ACC Accelerated Program
Current
I
ACC
CE
F
=V
IL
, OE=V
IH
ACC Ball
-
5
10
mA
Vcc
F
Ball
-
15
30
Standby Current
I
SB
1
Vcc
F
=Vcc
F
max, CE
F
=Vcc
F
±
0.3V,
RESET=Vcc
F
±
0.3V,
WP/ACC=Vcc
F
±
0.3V or Vss
±
0.3V
Vcc
F
=Vcc
F
max
, RESET=Vss
±
0.3V,
WP/ACC=Vcc
F
±
0.3V or Vss
±
0.3V
-
5
18
μ
A
Standby Curren During Reset
I
SB
2
-
5
18
μ
A
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