參數(shù)資料
型號(hào): K4S643232C-TL70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù): 25/43頁(yè)
文件大?。?/td> 1155K
代理商: K4S643232C-TL70
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 25
Single Bit Read-Write-Read Cycle(Same Page) @CAS Latency=3, Burst Length=1
: Don't care
tRCD
*Note 1
tSS
tSH
tRP
tCCD
tSS
*Note 2
tSH
tRAC
tSAC
tSLZ
tOH
tSH
tSS
tSS
tSH
tSS
tSH
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
0
~
BA
1
A
10
/AP
DQ
WE
DQM
Row Active
Read
Write
Read
Row Active
Precharge
tCH
tCC
tCL
tRAS
tRC
HIGH
tSH
tSH
tSS
tSS
*Note 2,3
BS
*Note 2,3 *Note 4
BS
*Note 4
*Note 3
*Note 3
*Note 3
Rb
Cc
Cb
Ca
Ra
BS
BS
BS
BS
Ra
Rb
Qc
Db
Qa
*Note 2,3
*Note 2
相關(guān)PDF資料
PDF描述
K4S643232C-TL80 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 8-PDIP
K4S643232C Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70
K4S643232C-TC10 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
K4S643232C-TC55 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
K4S643232C-TC60 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S643232C-TL80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TC45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC50 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL